TSM2N7000KCT B0G
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-92
Series
-
Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 10V
Power Dissipation (Max)
400mW (Ta)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Package
Box
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Base Product Number
TSM2N7000
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TSM2N7000KCT B0G Datasheet PDF
Data sheet
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